Abstract:
ICP (Inductively Couple Plasma) etching in InAs/GaSb type Ⅱ superlattice infrared detector material with Cl2/Ar and SiCl4/Ar were studied. The results show that the etching depth is linear with etching time for both etching gases. The etching rate is 100 nm/min at a set of conditions: RF power of 50 W, SiCl4 flow for 3 sccm, Ar to 9 sccm, the standard operating pressure is 2 mTorr. The etching rate did not depend on the doping concentration. The Ar flow fluctuation has no significant effect on etching rate when using SiCl4/Ar as the etch gases. But this condition exists in Cl2/Ar, especially when the flow of Ar under 3 sccm, and the etching rate droped with the reduction of Ar flow.