Abstract: The performance of InSb detectors with anodic oxide and photo-CVD oxide had been compared in this paper. It showed that leak current of detectosr with anodic oxide was less than those with photo-CVD oxide,and breakage voltage of the former detectors was as much as 5 times of the latter ones, but the photocurrent and impedance of the former ones was the same as the latter.The results of capacitance-voltage(C-V) characteristics showed that fixed charge density of the anodic detectors was 21011 cm-2, and the latter was 1.51011 cm-2. After ageing experiment, when inversion bias was 1 V, the change rate of leak current ratio of the former was only 50% of the latter, while the photocurrent of detectors with both methods increase,which was possible related to photosensitive area's expansion.The anodic oxide passivation of detector had the three advantage of the process control, the fabricate uniformity and the stability of interface state.