发光二极管电子辐照效应的研究

Electron radiation effect of LED

  • 摘要: 研究电子辐照对发光二极管(Light emitting diode,LED)性能的影响。利用电子加速器提供的电子束模拟空间电子辐射环境,试验时电子的能量是1.0 MeV,辐射最大剂量为1106 rad(Si)。辐照期间,采用异位测试的方法进行光学量和电学量的测量,并进行辐射后退火效应的研究。结果表明:随着辐照剂量的增加,LED的输出光功率近似线性衰减,其正向压降V增大,且不同的试验条件对LED性能损伤的程度不同。此外,辐射停止后的一段时间,器件的性能有所恢复,并趋于稳定。同时利用电子辐照机理对试验结果进行理论分析和讨论。

     

    Abstract: The effect of electron radiation on LED was studied. Making use of the electron beam from electron accelerator to simulate the space electron irradiation, test the energy electron was at 1.0 MeV and the maximal total dose at 1106 rad(Si). The optical, electrical and annealing properties were measured after radiation. The results showed that with the increase of radiation dose, LED's light power degenerated linearly, while its voltage increased, and the degenerate extent was diverse in different experimental conditions. In addition, after a period of annealing time, LED's capability recovered to some extent and kept stable. The experimental result was analyzed and discussed through the mechanism of electron radiation.

     

/

返回文章
返回