耿红艳, 周州, 宋国峰, 徐云. 红外探测器倒装互连技术进展[J]. 红外与激光工程, 2014, 43(3): 722-726.
引用本文: 耿红艳, 周州, 宋国峰, 徐云. 红外探测器倒装互连技术进展[J]. 红外与激光工程, 2014, 43(3): 722-726.
Geng Hongyan, Zhou Zhou, Song Guofeng, Xu Yun. Flip chip bonding technology for IR detectors[J]. Infrared and Laser Engineering, 2014, 43(3): 722-726.
Citation: Geng Hongyan, Zhou Zhou, Song Guofeng, Xu Yun. Flip chip bonding technology for IR detectors[J]. Infrared and Laser Engineering, 2014, 43(3): 722-726.

红外探测器倒装互连技术进展

Flip chip bonding technology for IR detectors

  • 摘要: 随着红外焦平面技术的发展,红外探测器探测波段已由单波段变为双色及四色波段,半导体元件的封装数量由最初的数十个发展到数百万个,I/O输出密度不断增大,传统微互联技术如引线键合技术、载带自动焊技术等已根本无法满足器件要求。倒装焊技术以其封装尺寸小、互联密度高、生产成本低的特点越来越受到人们的亲睐。倒装互连工艺主要包括:UBM 制备、铟膜沉积、回流成球、倒压焊、填充背底胶。介绍了各工艺步骤的发展状况,并对铟膜沉积、铟柱增高工艺进行详细阐述。

     

    Abstract: Two-color and four-color detectors have been emerged as the development of Infrared Focal Plane Array technology. Millions of pixels have arisen on the chips and the spot pitch is even less than 13 micron. So high I/O density makes the fabrication more critical. This is beyond the ability of traditional micro-interconnection technology such as wire bonding (WB) technology and tape automated bonding (TAB) technology. Flip chip hybridization offers numbers of advantages over the widely used wire bonding technique such as small package size, high interconnect density and low cost. It consists of procedures: Under Bump Metallization deposition, indium deposition, reflowing, flip-chip bonding and inserting the underfill. Development of every procedure was performed. And the indium bumps were also emphasized for that indium bumping was a critical technology in the application of high-density interconnection between a focal plane array and a Si read-out integrated circuit (ROIC) by flip chip bonding.

     

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