In view of the thermal damage law and mechanism of monocrystalline silicon for millisecond pulsed laser, the temperature of monocrystalline silicon irradiated by millisecond pulsed laser is measured by high precision point temperature meter and spectral inversion system. Then the temperature evolution process is analyzed. Also, the temperature state during the whole process of thermal damage of monocrystalline silicon irradiated by millisecond pulsed laser and the corresponding damage structure are studied. The results of this study show that the peak temperature of laser-induced monocrystalline silicon increases with the increase of energy density when the pulse width is fixed, When the pulse width is between 1.5 ms-3.0 ms, The temperature decreases with the increase of pulse width. Temperature rise curve shows inflection point when it is close to the melting point (1687 K), the reflection coefficient is from 0.33 to 0.72. During the gasification and solidification stages, it also shows the gasification and the solidification plateau periods. Thermal cleavage damage of monocrystalline silicon precedes thermal erosion damage. Stress damage dominates under low energy density laser irradiation, while thermal damage dominates under high energy density laser irradiation. The damage depth is proportional to the energy density and increases rapidly with the increase of the number of pulses.