Whole process simulation framework of the illumination effects of intense light on the flat panel detectors

The illumination effects of intense light on detectors are attracting wide interests. A whole process simulation framework of the illumination effects was introduced. The framework was consisted of four component, including the propagation of light, the heat transfer on FPA, the transport process of photodiode and the effects of post process circuit. We are attempting to reduce the coupling between each component through proper interface design, which leads to better adaptability for various physical models. A simple example with this framework was calculated. An analytic model including only diffracting effects was considered, and the differences of Gaussian and parallel light were discussed. In the heat transfer component, the Fourier's Law was introduced, and a simplified heat sink configuration was used. In the transport process component, the drift-diffusion equation including temperature effects was used to calculate the transport effects of photo diodes. The influences of neighboring pixels were neglected. In the post process circuit component, the Correlated Double Sample (CDS) configuration was used. The results show good agreement with previous work.