Xin Guangze, Chen Dongqi, Cai Yi, Bai Tingzhu, Wang Lingxue. Beam shaping method to improve power density of semiconductor laser diodes[J]. Infrared and Laser Engineering, 2019, 48(8): 805010-0805010(7). DOI: 10.3788/IRLA201948.0805010
Citation: Xin Guangze, Chen Dongqi, Cai Yi, Bai Tingzhu, Wang Lingxue. Beam shaping method to improve power density of semiconductor laser diodes[J]. Infrared and Laser Engineering, 2019, 48(8): 805010-0805010(7). DOI: 10.3788/IRLA201948.0805010

Beam shaping method to improve power density of semiconductor laser diodes

  • To solve the problem that the power density of laser beam attenuated along the propagation direction, which was caused by large beam divergence angle (14-46) of semiconductor laser diode, a beam shaping optical system to improve power density was proposed. An X type planoconvex cylindrical lens and a Y type planoconvex cylindrical lens were selected to collimate the laser beam. Then, a pair of planoconvex spherical lenses were applied to improve the parallelism. Finally, a single planoconvex spherical lens focused the laser beam to a spot with high power density. The lenses were chosen and optimized through Light Tools simulation. A real beam shaping optical system was mounted and built. Test results show that 67% laser power is converged into a cycle with diameter of 1 mm, and the power density is over 30 W/cm2.
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