Zhou Weijie, Ma Wenqiang, Li Rao, Chu Geyao, Song Baoan, Dai Shixun, Xu Tiefeng, Zhang Peiqing. Femtosecond laser damage characteristics of Ge-As-Se-Te chalcogenide glass[J]. Infrared and Laser Engineering, 2022, 51(4): 20210222. DOI: 10.3788/IRLA20210222
Citation: Zhou Weijie, Ma Wenqiang, Li Rao, Chu Geyao, Song Baoan, Dai Shixun, Xu Tiefeng, Zhang Peiqing. Femtosecond laser damage characteristics of Ge-As-Se-Te chalcogenide glass[J]. Infrared and Laser Engineering, 2022, 51(4): 20210222. DOI: 10.3788/IRLA20210222

Femtosecond laser damage characteristics of Ge-As-Se-Te chalcogenide glass

  • Ge-As-Se-Te (GAST) chalcogenide glass has ultra-wide transmission range of more than 20 μm, an excellent optical material that can be applied in mid-infrared (MIR) and far-infrared (FIR). In this work, the GexAs40−xSe40Te20 (x=0, 10, 20, 30, 40 mol%) chalcogenide glasses were prepared by the fusion quenching method, and the optical properties were tested. The sample glass was irradiated with femtosecond lasers of different wavelengths (800 nm, 3 μm and 4 μm), different powers and repetition frequencies, and the laser damage characteristics of GAST were studied by scanning electron microscopy (SEM) and Raman spectroscopy. With the increase of Ge content, the laser-induced damage threshold (LIDT) at 800 nm reaches a maximum of 40.16 mJ/cm2 at Ge30As10Se40Te20. The LIDT increase with wavelength of the femtosecond laser and reaches 81.09 mJ/cm2 at 4 μm. In addition, the results show that LIDT will gradually decrease as the number of laser pulses and the repetition rate increase.
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