Chen Hongfu, Luo Man, Shen Niming, Xu Tengfei, Qin Jiayi, Hu Weida, Chen Xiaoshuang, Yu Chenhui. Research progress of two-dimensional layered materials-based heterojunction photodetectors(Invited)[J]. Infrared and Laser Engineering, 2021, 50(1): 20211018. doi: 10.3788/IRLA20211018
Citation:
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Chen Hongfu, Luo Man, Shen Niming, Xu Tengfei, Qin Jiayi, Hu Weida, Chen Xiaoshuang, Yu Chenhui. Research progress of two-dimensional layered materials-based heterojunction photodetectors(Invited)[J]. Infrared and Laser Engineering, 2021, 50(1): 20211018. doi: 10.3788/IRLA20211018
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Research progress of two-dimensional layered materials-based heterojunction photodetectors(Invited)
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Chen Hongfu1, 2
,
,
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Luo Man1, 2
,
,
,
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Shen Niming1
,
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Xu Tengfei1, 2
,
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Qin Jiayi1
,
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Hu Weida2
,
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Chen Xiaoshuang2
,
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Yu Chenhui1
,
,
- 1.
Jiangsu Key Laboratory of ASIC Design, School of Information Science and Technology, Nantong University, Nantong 226019, China
- 2.
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- Received Date: 2020-11-10
- Rev Recd Date:
2020-12-17
Available Online:
2021-01-22
- Publish Date:
2021-01-22
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Abstract
Since the era of graphene, two-dimensional layered materials (2DLMs) with distinctive physical, chemical and optoelectronic properties have attracted extensive attention from researchers worldwide. Benefiting from the diversity of material composition and the layer number dependence of their bandgap, the spectral response ranges of 2DLMs can cover an extremely wide band from ultraviolet to infrared radiation. Moreover, because of the lifting of the restriction on lattice matching, 2DLMs can be stacked with other dimensional materials, such as bulk materials, nanowires, and quantum dots, through van der Waals (vdWs) forces, creating unique and exclusive devices from integrated structures. This article reviewed the research progress of several typical 2DLMs heterojunction photodetectors with great potential application in the field of photodetection, focusing on the breakthrough results achieved in performance improvements such as device gain, junction rectification ratio, response time and detection wavelength coverage for devices based on tungsten diselenide (WSe2), arsenic phosphorus (AsP), niobium trisulfide (NbS3) and palladium diselenide (PbSe2), through innovations in heterostructure building and exploitation of 2D processing cutting-edge technology. Meanwhile, we had also briefly analyzed the current challenges confronted by these device researches, and tentatively forecasted its future development trend.
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References
[1]
|
Xu T F, Wang H L, Chen X Y, et al. Recent progress on infrared photodetectors based on InAs and InAsSb nanowires [J]. Nanotechnology, 2020, 31(29): 294004. doi: 10.1088/1361-6528/ab8591 |
[2]
|
胡伟达, 李庆, 陈效双, 等. 具有变革性特征的红外光电探测器[J]. 物理学报, 2019, 68(12): 12070.
Hu Weida, Li Qing, Chen Xiaoshuang, et al. Recent progress on advanced infrared photodetectors [J]. Acta Physica Sinica, 2019, 68(12): 12070. (in Chinese) |
[3]
|
罗曼, 吴峰, 张莉丽, 等. 二维材料偏振响应光电探测[J]. 南通大学学报(自然科学版), 2019, 18(3): 1-10.
Luo Man, Wu Feng, Zhang Lili, et al. Detection of polarized light using two-dimensional atomic materials [J]. Journal of Nantong University (Natural Science Edition), 2019, 18(3): 1-10. (in Chinese) |
[4]
|
Guo N, Xiao L, Gong F, et al. Light-driven WSe2-ZnO junction field-effect transistors for high-performance photodetection [J]. Advanced Science, 2020, 7(1): 1901637. doi: 10.1002/advs.201901637 |
[5]
|
Luo M, Wu F, Long M S, et al. WSe2/Au vertical Schottky junction photodetector with low dark current and fast photoresponse [J]. Nanotechnology, 2018, 29(44): 444001. |
[6]
|
Tang Y C, Wang Z, Wang P, et al. WSe2 photovoltaic device based on intramolecular p-n junction [J]. Small, 2019, 15(12): 1805545. doi: 10.1002/smll.201805545 |
[7]
|
Wu F, Li Q, Wang P, et al. High efficiency and fast van der Waals hetero-photodiodes with a unilateral depletion region [J]. Nature Communications, 2019, 10(1): 4663. doi: 10.1038/s41467-019-12707-3 |
[8]
|
Wu F, Xia H, Sun H D, et al. AsP/InSe Van der Waals tunneling heterojunctions with ultrahigh reverse rectification ratio and high photosensitivity [J]. Advanced Functional Materials, 2019, 29(12): 1900314. doi: 10.1002/adfm.201900314 |
[9]
|
Wang Yang, Wu Peisong, Wang Zhen, et al. Air-stable low-symmetry narrow-bandgap 2D sulfide niobium for polarization photodetection [J]. Advanced Materials, 2020, 32(45): 2005037. |
[10]
|
Long M S, Wang Y, Wang P, et al. Palladium diselenide long-wavelength infrared photodetector with high sensitivity and stability [J]. ACS Nano, 2019, 13(2): 2511-2519. |
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Proportional views
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