Progress in growth control and applications of optoelectronic devices of bismuthene

Graphene and other two-dimensional (2D) materials have attracted extensive attention in the field of science and engineering because of their unique physical and chemical properties. To explore novel 2D material system and expand its application range is a hot research hotspot. Among them, the 2D group-VA monoelemental Xenes (phosphorene, arsenene, antimonene and bismuthene) have narrow adjustable energy band width, high charge carrier mobility, excellent light transmission and outstanding photonics properties, which obtained a great attention in 2D materials. Similarly, bismuthene has also attracted attention in their optoelectronic applications. In view of this, this paper analyzes the relevant theory and experimental research progress of bismuthene from the aspects of basic physical structures, material preparation methods and optoelectronic applications. In the aspect of controllable preparation of materials, electrochemical exfoliation method of bismuthene is mainly discussed. Finally, the application status of bismuthene in optoelectronic field are discussed, including ultrafast optoelectronic devices, and the future development of bismuthene is prospected.