InSb infrared focal plane arrays detector based on Si wafer

The thermal expansion coefficient mismatch between InSb chips and silicon readout circuits was one of the prime reasons for cracking and indium column chip breakage, which carried out research InSb infrared Focal Plane Arrays (FPA) detectors banding on Si wafer. It used the technology of grinding, polishing thinning and the point cutting of diamond to cutting precisely on the backside of the chips, which on the purpose to have chips with a thickness of 15 m. The transmittance of infrared spectral obtained was higher than 88% in medium-short wavelength. The result shows that most of the important performance such as detectivity and responsivity of FPA under the bonding technique are equal to traditional structure FPA. Furthermore, the performance of these FPA doesn't degress after temperature shock experiment, which proves that the Si-bonding technology can solve the problem brought out by indium columns breakage of impact stresses, which plays a dominant role in the yield of InSb infrared focal plane arrays detectors.