Zhou Yaxun, Xu Xingchen. Design of C+L-band broad gain-flattened bismuth-basederbium-doped fiber amplifier[J]. Infrared and Laser Engineering, 2012, 41(8): 2119-2124.
Citation: Zhou Yaxun, Xu Xingchen. Design of C+L-band broad gain-flattened bismuth-basederbium-doped fiber amplifier[J]. Infrared and Laser Engineering, 2012, 41(8): 2119-2124.

Design of C+L-band broad gain-flattened bismuth-basederbium-doped fiber amplifier

  • Inordertomeetthedevelopingneedsofbroadamplificationaswellasgain-flattened operationforfiberamplifier,adouble-passstructureofbismuth-basederbium-dopedfiberamplifier(Bi- EDFA)withtheincorporationofC-band(1530-1565nm)broadfiberBragggrating(FBG)inbetweenthe twocascadedsegmentsofbismuth-basederbium-dopedfiber(Bi-EDF)wasdesigned,andtheamplifying performancesofBi-EDFAwerepresentedtheoretically.Theresultsindicatethatabroadamplification andgain-flattenedspectrumcanbeachievedwiththeaidofthesimultaneouslyobtainedhighgainofthe C-bandandL-band(1570-1620nm)signalsduetotheirexperiencingadifferentlengthbi-directional transmissioninBi-EDFaftertheincorporationofFBG.Againbandwidthof90cmwithaveragegain 35.7dBandgainvariationofapproximatelyupanddown2.3dBwithinthewavelengthrangefrom1530nmto1620nm areobtainedundertheconditionsofthe1480nmbi-directionalsymmetricalpumpingwithpumppower of200mW,thefirstandsecondBi-EDFlengthof50cmand170cm,and56-channelsignalsofC+L bandwithintervalof2nmandeachpowerof-30dBmareinputtedsimultaneously.Meanwhile,thenoisefigureofBi-EDFAisimprovedevidently.Thetheoreticalstudieswillprovidepracticalsignificancefora newdesignofC+L-bandBi-EDFAwithbroadandflattenedgain.
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