Adjusting methods of deposition rates of oxide films prepared by IBS technology

The effects of preparative parameters such as substrate temperature, ion beam voltage, ion beam current and oxygen flow on the deposition rate of films were systematically researched by using the orthogonal experiment design method. The films including HfO2, Ta2O5 and SiO2 films were prepared by time-power monitoring of ion beam sputtering technology. The 9 groups experiments were arranged by L9 (34). The physical thicknesses of all the 27 samples were measured by elliptical polarization instrument, and then the deposition rates were obtained. The experimental results show that the deposition rate of Ta2O5 and SiO2 films are affected by preparative parameters with the same influence weight, from high to low the order is ion beam current, ion beam voltage, oxygen flow and substrate temperature. But to the HfO2 films, the order is ion beam current, ion beam voltage, substrate temperature and oxygen flow. The results provide references for adjusting the deposition rate of HfO2, Ta2O5 and SiO2 films.