Jiang Xiaofeng, Lin Chun, Xie Haihe, Huang Yuanqing, Yan Huangping. MEMS F-P interferometry pressure sensor[J]. Infrared and Laser Engineering, 2014, 43(7): 2257-2262.
Citation: Jiang Xiaofeng, Lin Chun, Xie Haihe, Huang Yuanqing, Yan Huangping. MEMS F-P interferometry pressure sensor[J]. Infrared and Laser Engineering, 2014, 43(7): 2257-2262.

MEMS F-P interferometry pressure sensor

  • In order to meet the requirements of industry, aerospace and defense for miniature pressure sensors, an optical F-P interferometry pressure sensor which was made from all-glass material was presented, the sensor head of which was made from all-glass material. The processing steps of MEMS craft for fabrication of the all-glass optical pressure sensor were studied mainly, F-P cavity was made on 7 740 wafer based on sputtering, photolithography and etching technology, a 40 nm thick amorphous silicon layer deposited by low-pressure chemical vapor deposition (LPCVD) on this wafer was used as an intermediate layer. Then glass-to-glass anodic bonding was finished under the temperature of 380. Finally, the pressure measurement system was established. The experiment result shows that a high repeatability in the range of 0-400 kPa pressure and a reasonable sensitivity of 1.764 nm/kPa have been obtained in this pressure sensor. The temperature-sensitivity coefficient of the sensor was about 0.15 nm/℃ in the range of 0-80℃. The study of the pressure sensor would be of utility value for design and fabrication of low temperature drift typed pressure sensor.
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