Design and preparation of anti-reflection and protective film in 8-11 μm infrared detection system

With the rapid development of modern military space technology, the requirement of infrared detector is increasing, the requirement of infrared optical element will stricter at the same time. The preparation of anti-reflection and protective film on the substrate of ZnS were mainly studied. The coating method of dielectric and hard film were combined, through the comparative analysis of different materials, finally, the carbide germanium (Ge1-xCx) as transition layer which between media film and DLC would be selectted. Using electron beam and ion source assisted deposition technology to manufacture the dielectric film, and using magnetron sputtering technology to manufacture the transition layer, at the end of process the DLC will be prepared by chemical vapor deposition technique. The problems of stress matching, and integrate different sedimentary processes were solved, meanwhile a stable process preparation process was got. Finally, the anti-reflection and protective film were deposited which average transmitted is 92%, the hardness meets the requirements.