Development of domestic resistive arrays technology

The main technology schemes, advantages, disadvantages and final results of three generations of domestic resistive arrays were reviewed andsummarized. The first generation of 64 64 resistive array was composed of bulk micromachined single crystal silicon membrane elements. The yield of resistors was acceptably high but the uniformity, power consumption performance, fill factor, format size and the compatibility of fabrication technology with CMOS process were very poor. The second generation of 128128 and 256256 resistive arrays were characterized of bulk micromachined multilayer resistor elements. With great improvements of process compatibility, uniformity and power consumption, the fill factor and format size were just increased to some limited extent. The third generation of 128 128 multilayer suspended membrane resistive array was fabricated by using membrane transfer technology, with the fill factor and power consumption performance greatly improved. This innovative technique still needs to be matured but is expected to be the mainstream fabrication technology for future domestic resistive arrays. In the end, the future technology developments of domestic resistive arrays were prospected, analyzed and discussed.