Study on the light response characteristics of PV HgCdTe linear array detector with CTIA circuit

PV HgCdTe linear array detector was irradiated by supercontinuum laser light of various intensities. A series of photoresponsive output of HgCdTe detector under various laser intensities were shown. Some new phenomena of irradiated cell, supersaturation, low-voltage output were observed. The results were quite different from normal linear and saturated response. Besides, the nonirradiated units' output signal had responded. The range of threshold of various stages were given, on the basis of summarizing the responsive properties of HgCdTe detector. With further investigation, it is demonstrated that the paradoxical responded phenomenon of irradiated cell is primarily caused by the light response of the basal signal of the device's CDS circuit in bright light and the phenomenon of nonirradiated cell is primarily caused by the public P pole structure of linear array detector and the public Vref voltage structure of circuit.