Zhang Liwei, Shang Liping, Tang Jinlong, Xia Zuxue, Deng Hu. Simulation of radiation characteristics of 34 μm aperture GaAs dipole photoconductive antenna[J]. Infrared and Laser Engineering, 2013, 42(1): 108-112.
Citation: Zhang Liwei, Shang Liping, Tang Jinlong, Xia Zuxue, Deng Hu. Simulation of radiation characteristics of 34 μm aperture GaAs dipole photoconductive antenna[J]. Infrared and Laser Engineering, 2013, 42(1): 108-112.

Simulation of radiation characteristics of 34 μm aperture GaAs dipole photoconductive antenna

  • Simulation characteristics of photoconductive antenna(PCA) radiation are the important basis for design and manufacture of photoconductive antenna. The method introduced the relationship between Monte-Carlo empirical-formula and updated GaAs migration-rate versus electric-field strength. The photo-generated carrier-density of 34 m-apeture GaAs dipole photoconductive antenna was computed based on Drude-Lorentz model. Combining the photo-generated carrier-density with finite difference time domain(FDTD) method, time-domain, frequency-domain and three-dimensional radiation characteristics were simulated. The frequency spectrum of the terahertz radiation ranged about 1 THz, and its amplitude peaks were at roughly 0.8 THz, which consisted well with the data obtained from terahertz time-domain spectrum system(THz-TDS). The results show the feasibility of this method, which provides a reference for design and manufacture of the high-gain, wideband THz photoconductive antenna.
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