[1] |
|
[2] |
Monroy E, Omnes F, Calle F. Wide-bandgap semiconductor ultraviolet photodetectors[J]. Semiconductor Science and Technology, 2003, 18(4): R33-R51. |
[3] |
Reine M B, Hairston A, Lamarre P. et al. Solar-blind AlGaN 256256 p-i-n detectors and focal plane arrays[C]//SPIE, 2006, 6119: 6119-1. |
[4] |
|
[5] |
|
[6] |
Pulfrey David L, Kuek J J, Leslie M P, et al. High UV/solar rejection ratios in GaN/AlGaN/GaN P-I-N photodiodes[J]. IEEE Transactions on Electron Devices, 2001, 48(3): 486-489. |
[7] |
Huang Xin, Luo Muchang, Zhou Xun. Modeling and simulation of the back-illuminated AlGaN/GaN based photodetectors[J]. Infrared and Laser Engineering, 2011, 40(11): 2071-2077. (in Chinese) 黄鑫, 罗木昌, 周勋. 背照式AlGaN/GaN基光电探测器的结构设计及性能模拟[J]. 红外与激光工程, 2011, 40(11): 2071-2077. |