[1] |
Smith D L, Mailhiot C. Proposal for strained type Ⅱ superlattice infrared detectors[J]. Appl Phys, 1987, 62:2545-2548. |
[2] |
|
[3] |
|
[4] |
Chen Huijuan, Guo Jie, Ding Jiaxin, et al. Study of mesa etching for a inAs/GaSb superlattice infrared detectors[J]. Microscope, Measurement, Microfabrication Equipment, 2008, 45(5): 298-301. (in Chinese) |
[5] |
陈慧娟, 郭杰, 丁嘉欣, 等. InAs/GaSb超晶格红外探测器台面湿法腐蚀研究[J]. 显微、测量、微细加工技术与设备, 2008, 45(5): 298-301. |
[6] |
Wang Chenfei. New etching method in semiconductor craftICP[J]. Infrared, 2005(1): 17-22. (in Chinese) |
[7] |
|
[8] |
Vander Drift E, Cheung R, Zijlstra T. Dry etching and induced damage[J]. Micro Electron Eng, 1996, 32(1-4): 241-253. |
[9] |
|
[10] |
Kutty M N, Plis E, Khoshakhlagh A, et al. study of surface treaments on InAsGaSb superlattice LWIR detectors[J]. Electronic Materials, 2010, 39(10): 2203-2209. |
[11] |
王晨飞. 半导体工艺中的新型刻蚀技术ICP[J]. 红外, 2005(1): 17-22. |
[12] |
Pearton S J, Chakrabarti U K, Hobson W S, et al. Cl2 and SiCl4 reactive ion etching of In-based Ⅲ-Ⅴsemiconductors[J]. Electrochem Soc, 1990, 137(10): 3188-3202. |
[13] |
|
[14] |
Zhang Guodong, Si Junjie, Wang Liuen. High rate etching of InSb in high density plasma of CH4/H2/Ar and Cl2[J]. Infrared and Laser Engineering, 2012, 41(4): 843-846. (in Chinese) |
[15] |
|
[16] |
Nguyen J, Hill C J, Rafol D, et al. Pixel isolation of low dark-current large-format InAs/GaSb superlattice complementary barrier infrared detector focal plane arrays with high fill factor[C]//SPIE, 2011, 7945: 79451. |
[17] |
Siew Li Tan, Yu Ling Goh, Sankha dip Das, et al. Dry etching and surface passivation techniques for type-Ⅱ InAsGaSb superlattice intrared detectors[C]//SPIE, 2010, 7838: 783814. |
[18] |
|
[19] |
|
[20] |
Giehl A R, Gumbel M, Kessler M, et al. Deep dry etching of GaAs and GaSb using Cl2/Ar plasma discharges[J]. Vac Sci Technol B, 2003, 21: 2393-2397. |
[21] |
|
[22] |
Delaunay, Nguyen P Y, Hoffman B M, et al. Background limited performance of long wavelength infrared focal plane arrays fabricated from M-structureInAs/GaSb superlattices[C]//SPIE, 2009, 7222: 72220W. |
[23] |
Elena Plis, Stephen Myers, Arezou Khoshakhlagh, et al. InAs/GaSb strained layer superlattice detectors with nBn design[J]. Infrared Physics Technology, 2009, 52: 335-339. |
[24] |
|
[25] |
|
[26] |
|
[27] |
|