国产电阻阵列技术的发展趋势

马斌; 程正喜; 翟厚明; 郭中原; 刘强; 张学敏; 丁毅; 陈瑶

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国产电阻阵列技术的发展趋势

马斌, 程正喜, 翟厚明, 郭中原, 刘强, 张学敏, 丁毅, 陈瑶

文章导航 > 红外与激光工程 > 2011 > 40(12): 2314-2322

马斌, 程正喜, 翟厚明, 郭中原, 刘强, 张学敏, 丁毅, 陈瑶. 国产电阻阵列技术的发展趋势[J]. 红外与激光工程, 2011, 40(12): 2314-2322.

引用本文:

马斌, 程正喜, 翟厚明, 郭中原, 刘强, 张学敏, 丁毅, 陈瑶. 国产电阻阵列技术的发展趋势[J]. 红外与激光工程, 2011, 40(12): 2314-2322.

MA Bin, CHENG Zheng-Xi, DI Hou-Ming, GUO Zhong-Yuan, LIU Qiang, ZHANG Xue-Min, DING Yi, CHEN Yao. Development of domestic resistive arrays technology[J]. Infrared and Laser Engineering, 2011, 40(12): 2314-2322.

Citation:

MA Bin, CHENG Zheng-Xi, DI Hou-Ming, GUO Zhong-Yuan, LIU Qiang, ZHANG Xue-Min, DING Yi, CHEN Yao. Development of domestic resistive arrays technology[J]. Infrared and Laser Engineering, 2011, 40(12): 2314-2322.

国产电阻阵列技术的发展趋势

1.
中国科学院上海技术物理研究所中国科学院红外成像材料与器件重点实验室,上海200083

Development of domestic resistive arrays technology

1.
Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China

摘要: 回顾和总结了国产电阻阵列3 个发展阶段的主要技术方案、优缺点和最终结果。第一代64 64 电阻阵列采用了体材料微机械加工的单晶硅薄膜微型电阻，成品率较高但与CMOS 工艺不兼容、均匀性差、功耗大、占空比极低、规模小；第二代128128 和256256 电阻阵列采用了体材料微机械加工的复合薄膜微型电阻，基本解决了工艺兼容性、均匀性、功耗等方面的问题，但占空比和规模提高有限；第三代128128 复合悬浮薄膜电阻阵列采用了薄膜转移技术，占空比显著提高，功耗明显下降，该技术有望成为今后国产电阻阵列的主流制造技术，但技术成熟度有待进一步提高。最后，对国产电阻阵列未来技术发展进行了展望、分析和探讨。
- 半实物仿真 /
- 电阻阵列 /
- 硅各向异性腐蚀 /
- 薄膜转移
Abstract: The main technology schemes, advantages, disadvantages and final results of three generations of domestic resistive arrays were reviewed andsummarized. The first generation of 64 64 resistive array was composed of bulk micromachined single crystal silicon membrane elements. The yield of resistors was acceptably high but the uniformity, power consumption performance, fill factor, format size and the compatibility of fabrication technology with CMOS process were very poor. The second generation of 128128 and 256256 resistive arrays were characterized of bulk micromachined multilayer resistor elements. With great improvements of process compatibility, uniformity and power consumption, the fill factor and format size were just increased to some limited extent. The third generation of 128 128 multilayer suspended membrane resistive array was fabricated by using membrane transfer technology, with the fill factor and power consumption performance greatly improved. This innovative technique still needs to be matured but is expected to be the mainstream fabrication technology for future domestic resistive arrays. In the end, the future technology developments of domestic resistive arrays were prospected, analyzed and discussed.
- hardware-in-the-loop simulation /
- resistive array /
- silicon anisotropic etching /
- membrane transfer

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国产电阻阵列技术的发展趋势

1. 中国科学院上海技术物理研究所中国科学院红外成像材料与器件重点实验室,上海200083

刊出日期: 2011-12-25

关键词:

摘要: 回顾和总结了国产电阻阵列3 个发展阶段的主要技术方案、优缺点和最终结果。第一代64 64 电阻阵列采用了体材料微机械加工的单晶硅薄膜微型电阻，成品率较高但与CMOS 工艺不兼容、均匀性差、功耗大、占空比极低、规模小；第二代128128 和256256 电阻阵列采用了体材料微机械加工的复合薄膜微型电阻，基本解决了工艺兼容性、均匀性、功耗等方面的问题，但占空比和规模提高有限；第三代128128 复合悬浮薄膜电阻阵列采用了薄膜转移技术，占空比显著提高，功耗明显下降，该技术有望成为今后国产电阻阵列的主流制造技术，但技术成熟度有待进一步提高。最后，对国产电阻阵列未来技术发展进行了展望、分析和探讨。

English Abstract

Development of domestic resistive arrays technology

1. Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China

Publish Date: 2011-12-25

Keywords:

Abstract: The main technology schemes, advantages, disadvantages and final results of three generations of domestic resistive arrays were reviewed andsummarized. The first generation of 64 64 resistive array was composed of bulk micromachined single crystal silicon membrane elements. The yield of resistors was acceptably high but the uniformity, power consumption performance, fill factor, format size and the compatibility of fabrication technology with CMOS process were very poor. The second generation of 128128 and 256256 resistive arrays were characterized of bulk micromachined multilayer resistor elements. With great improvements of process compatibility, uniformity and power consumption, the fill factor and format size were just increased to some limited extent. The third generation of 128 128 multilayer suspended membrane resistive array was fabricated by using membrane transfer technology, with the fill factor and power consumption performance greatly improved. This innovative technique still needs to be matured but is expected to be the mainstream fabrication technology for future domestic resistive arrays. In the end, the future technology developments of domestic resistive arrays were prospected, analyzed and discussed.