强激光脉冲辐照对多晶硅片导电性的影响

许德富; 肖啸; 李育德

doi:10.3788/IRLA201645.S106003

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强激光脉冲辐照对多晶硅片导电性的影响

许德富, 肖啸, 李育德

文章导航 > 红外与激光工程 > 2016 > 45(S1): 55-59

许德富, 肖啸, 李育德. 强激光脉冲辐照对多晶硅片导电性的影响[J]. 红外与激光工程, 2016, 45(S1): 55-59. doi: 10.3788/IRLA201645.S106003

引用本文:

许德富, 肖啸, 李育德. 强激光脉冲辐照对多晶硅片导电性的影响[J]. 红外与激光工程, 2016, 45(S1): 55-59. doi: 10.3788/IRLA201645.S106003

Xu Defu, Xiao Xiao, Li Yude. Effect of high power laser pulse on the electroconductivity of multi-crystalline silicon wafer[J]. Infrared and Laser Engineering, 2016, 45(S1): 55-59. doi: 10.3788/IRLA201645.S106003

Citation:

Xu Defu, Xiao Xiao, Li Yude. Effect of high power laser pulse on the electroconductivity of multi-crystalline silicon wafer[J]. Infrared and Laser Engineering, 2016, 45(S1): 55-59. doi: 10.3788/IRLA201645.S106003

强激光脉冲辐照对多晶硅片导电性的影响

doi: 10.3788/IRLA201645.S106003

1.
乐山师范学院物理与电子工程学院,四川乐山 614004;
2.
四川大学电子信息学院,四川成都 610064

基金项目:

四川省科技计划项目(SC6014534);乐山市科技攻关项目(ZD130541)

详细信息

作者简介:
许德富(1968-),男,副教授,硕士,主要从事激光与材料相互作用领域方面的研究。Email:1972631141@qq.com

中图分类号: TN249

Effect of high power laser pulse on the electroconductivity of multi-crystalline silicon wafer

1.
School of Physics and Electronic Engineering,Leshan Normal University,Leshan 614004,China;
2.
School of Electronics and Information Engineering,Sichuan University,Chengdu 610064,China

摘要: 为了减小多晶硅中晶界、位错、微缺陷和过渡族杂质对多晶硅太阳电池效率的不利影响,采用兆瓦级可调谐TEA CO2高功率激光器输出的激光脉冲对硅片进行预处理。使用10m带不同支线的脉宽约为200 ns红外激光脉冲在20 mm汞柱的氢气氛中对多晶硅片辐照不同的脉冲数,制得25个样品;去除样品的损伤层后,用S2T-2A四探针测试仪测试了各组样品的电阻率,发现所有样品电阻率都有不同程度的降低,其中经P18和P20支线脉冲辐照3个脉冲的样品电阻率下降幅度最大,下降幅度最高达到50%;用高频光电导少子寿命测试仪测试样品的少子寿命,发现所有样品少子寿命都变长,其中经P18和P20辐照三个脉冲后的样品少子寿命增加幅度最大,增幅最高达30%。
- 红外激光 /
- 多晶硅片 /
- 导电性能
Abstract: In order to decrease the quantity of crystal bundary, dislocation, micro-defect and transition group impurity contained in multi-crystalline silicon and further to increase solar cell's photoelectric conversion efficiency, the silicon wafers were preprocessed for solar cell utilizing the laser pulse which was produced by TEA CO2 laser. The laser pulse duration is about 200 ns and the wavelength is about 10m. Multi-crystalline silicon wafers were placed in 20 mm Hg hydrogen gas and irradiated by different wavelength laser pulse and different pulse numbers, twenty-five samples were manufactured. After removing the affected layer, the sample's electrical resistivity was metered using S2T-2A four point probe tester. The result shows that all sample's electrical resistivity is cut down in different degree. Specifically the sample's electrical resistivity decline rate is the largest and its maximum is 50%, which is irradiated by P18 and P20 brunch and irradiated by three pulses. The lifetime of minority carrier of all samples was tested with high frequency photoconductive lifetime tester, the outcome of experiment indicates that all sample's minority carrier lifetime is increased. Especially the samples lifetime is raised largely which are irradiated by P18 and P20 brunch and irradiated by three pulses, their increasing amplitude reaches 30%.
- infrared laser /
- multi-crystalline silicon wafer /
- electrical conductivity

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强激光脉冲辐照对多晶硅片导电性的影响

doi: 10.3788/IRLA201645.S106003

1. 乐山师范学院物理与电子工程学院,四川乐山 614004;

2. 四川大学电子信息学院,四川成都 610064

作者简介:
许德富(1968-),男,副教授,硕士,主要从事激光与材料相互作用领域方面的研究。Email:1972631141@qq.com

收稿日期: 2016-01-11
修回日期: 2016-02-15
刊出日期: 2016-05-25

基金项目:

四川省科技计划项目(SC6014534);乐山市科技攻关项目(ZD130541)

中图分类号: TN249

关键词:

摘要: 为了减小多晶硅中晶界、位错、微缺陷和过渡族杂质对多晶硅太阳电池效率的不利影响,采用兆瓦级可调谐TEA CO2高功率激光器输出的激光脉冲对硅片进行预处理。使用10m带不同支线的脉宽约为200 ns红外激光脉冲在20 mm汞柱的氢气氛中对多晶硅片辐照不同的脉冲数,制得25个样品;去除样品的损伤层后,用S2T-2A四探针测试仪测试了各组样品的电阻率,发现所有样品电阻率都有不同程度的降低,其中经P18和P20支线脉冲辐照3个脉冲的样品电阻率下降幅度最大,下降幅度最高达到50%;用高频光电导少子寿命测试仪测试样品的少子寿命,发现所有样品少子寿命都变长,其中经P18和P20辐照三个脉冲后的样品少子寿命增加幅度最大,增幅最高达30%。

English Abstract

Effect of high power laser pulse on the electroconductivity of multi-crystalline silicon wafer

1. School of Physics and Electronic Engineering,Leshan Normal University,Leshan 614004,China;

2. School of Electronics and Information Engineering,Sichuan University,Chengdu 610064,China

Received Date: 2016-01-11
Rev Recd Date: 2016-02-15
Publish Date: 2016-05-25

Keywords:

Abstract: In order to decrease the quantity of crystal bundary, dislocation, micro-defect and transition group impurity contained in multi-crystalline silicon and further to increase solar cell's photoelectric conversion efficiency, the silicon wafers were preprocessed for solar cell utilizing the laser pulse which was produced by TEA CO2 laser. The laser pulse duration is about 200 ns and the wavelength is about 10m. Multi-crystalline silicon wafers were placed in 20 mm Hg hydrogen gas and irradiated by different wavelength laser pulse and different pulse numbers, twenty-five samples were manufactured. After removing the affected layer, the sample's electrical resistivity was metered using S2T-2A four point probe tester. The result shows that all sample's electrical resistivity is cut down in different degree. Specifically the sample's electrical resistivity decline rate is the largest and its maximum is 50%, which is irradiated by P18 and P20 brunch and irradiated by three pulses. The lifetime of minority carrier of all samples was tested with high frequency photoconductive lifetime tester, the outcome of experiment indicates that all sample's minority carrier lifetime is increased. Especially the samples lifetime is raised largely which are irradiated by P18 and P20 brunch and irradiated by three pulses, their increasing amplitude reaches 30%.