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如图2所示,首先考虑单色光入射到一种介质和金属的简单两层薄膜结构,金属的厚度延入射方向无限延伸,光场参量可以由传输矩阵给出[11-12]:
$$ \left( {\begin{array}{*{20}{c}} B \\ C \end{array}} \right) = \left( {\begin{array}{*{20}{c}} {\cos \left( \beta \right)}&{\dfrac{{i\sin \left( \beta \right)}}{{{\eta _1}}}} \\ { - i{\eta _1}\sin \left( \beta \right)}&{\cos \left( \beta \right)} \end{array}} \right)\left( {\begin{array}{*{20}{c}} 1 \\ {{\eta _2}} \end{array}} \right) $$ (1) 式中:β=(2πn1d1)/λ,d1表示介质的厚度,λ表示入射单色光的波长,n1和n2分别表示介质和金属的折射率,介质的折射率为大于1的实数,金属的折射率为复数n2=α+iβ;η1和η2分别表示介质和金属的特征光学导纳与自由空间光学导纳(η0=(ԑ0/μ0)1/2)相关,具体为η1=n1η0,η2=n2η0。两层薄膜的整个特征导纳为:
$$ Y = \frac{C}{B} $$ (2) 根据特征导纳Y,进一步求解反射系数γ和反射率R,则:
$$ R = \gamma \cdot {\gamma ^*} = \left( {\frac{{1 - Y}}{{1 + Y}}} \right) \cdot {\left( {\frac{{1 - Y}}{{1 + Y}}} \right)^*} $$ (3) 对于这样一个简单膜系,当${\left( {{\alpha ^2} + {\beta ^2} + n_2^2} \right)^2} \gg 4{\alpha ^2}n_2^2$时,令$\;{\mu _1} = {{\left( {\alpha n_2^2} \right)} \mathord{\left/ {\vphantom {{\left( {\alpha n_2^2} \right)} {\left( {{\alpha ^2} + {\beta ^2} + n_2^2} \right)}}} \right. } {\left( {{\alpha ^2} + {\beta ^2} + n_2^2} \right)}}$,$\;{\mu _2} = {{\left( {{\alpha ^2} + {\beta ^2} + n_2^2} \right)} \mathord{\left/ {\vphantom {{\left( {{\alpha ^2} + {\beta ^2} + n_2^2} \right)} \alpha }} \right. } \alpha }$。反射率的极小值和极大值可表示为:
$$ {R_{\min }} = {\left( {\frac{{1 - {\mu _1}}}{{1 + {\mu _1}}}} \right)^2} $$ (4) $$ {R_{\max }} = {\left( {\frac{{1 - {\mu _2}}}{{1 + {\mu _2}}}} \right)^2} $$ (5) 由于金属的透射率在光学厚度下的透射率接近于0,因而有Amax=1−Rmin。至此,求解了介质-金属两层薄膜的最大和最小单色吸收率。此外,可以得出极值处的特征介质厚度。有趣的是,当介质厚度介于两种特征厚度之间时,整个薄膜微腔的吸收率也会随之发生改变,进而有望通过薄膜厚度实现对于吸收特性的调控。
对于两层以上的多层薄膜光场参量可以在两层薄膜的基础上进行迭代计算[13],进而求得多层膜的光场参量。以四分之一光程差薄膜为代表的的多层光学膜计算是简单的。对于离散厚度和不透明的多层光学膜,其原理上依然遵从传输矩阵方程,而计算则会变得复杂,这在一定程度上丰富多层光学膜实现吸收的样式。
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当光照射到金属表面时,在金属表面会产生电磁表面波,这就是金属的表面等离激元特性。在此,构建一个简单的金属与介质的交界面模型,对金属表面等离激元的产生机理进行分析[14-16]。
如图3所示,金属与介质的介电常数分别为ԑ1和ԑ2。其中,β=kx表示的是沿x方向的传播常数。在该模型中,材料具有金属特性的条件是Re(ԑ1)<0,而对于金属材料来说,当电磁波频率小于等离子体频率ωp的时候,该条件都是满足的。因此,表面等离激元的模式,对应着沿x传播且在z方向快速衰减的电磁波的波动方程的解。
图 3 介质和金属交界面表面等离激元波示意图
Figure 3. Schematic diagram of the surface plasmon of the intersection of medium and metal
在TM模式的情况,根据麦克斯韦方程组,在z<0的范围内:
$$ \begin{aligned} & H_y(z)=A_1 {\rm{e}}^{i \beta x} {\rm{e}}^{k_1 z} \\ & E_x(z)=-i A_1 \frac{1}{\omega \varepsilon_0 \varepsilon_1} k_1 {\rm{e}}^{i \beta x} {\rm{e}}^{k_1 z} \\ & E_z(z)=-A_1 \frac{\beta}{\omega \varepsilon_0 \varepsilon_1} {\rm{e}}^{i \beta x} {\rm{e}}^{k_1 z} \end{aligned} $$ (6) 在z>0的范围内:
$$ \begin{split} & H_y(z)=A_2 {\rm{e}}^{i \beta x} {\rm{e}}^{-k_2 z} \\ & E_x(z)=i A_2 \frac{1}{\omega \varepsilon_0 \varepsilon_2} k_2 {\rm{e}}^{i \beta x} {\rm{e}}^{-k_2 z} \\ & E_z(z)=-A_2 \frac{\beta}{\omega \varepsilon_0 \varepsilon_2} {\rm{e}}^{i \beta x} {\rm{e}}^{-k_2 z} \end{split} $$ (7) 式中:k1和k2分别为法线方向的波矢分量。其中,波矢的倒数zi=1/|ki|(i=1,2)被定义为表面等离激元在介质中的衰减长度。在金属和介质的交界面,由电磁场的连续性条件要求,可得: $$ A=A_{1} $$ (8) $$ \frac{k_{2}}{k_{1}}=-\frac{\varepsilon_{2}}{\varepsilon_{1}} $$ (9) 根据公式(6)、(7)可知,当ԑ2>0时,Re(ԑ1)<0,即两种材料的介电常数实部的符号相反。因而,证明了在交界面处存在表面等离激元。此外,表面等离激元在两种材料的交界面传播的色散关系为:
$$ \beta=k_{0} \sqrt{\frac{\varepsilon_{1} \varepsilon_{2}}{\varepsilon_{1}+\varepsilon_{2}}} $$ (10) 当ԑ1为实数或复数时,该式都成立,即该色散关系不受材料损耗的限制。而在TE模式时,由于需要满足Re(k1)>0且Re(k2)>0,此时A1=A2=0。因此,TE模式下的表面等离激元波存在的条件不成立。综上可知,金属和介质表面仅存在TM模式的表面等离激元。
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相变材料在外部激励下能够改变其晶格结构进而带来不同相态之间较大的电学和光学性质差异。如图4(a)所示,以相变材料锗锑碲合金(Ge2Sb2Te5, GST)为例介绍相变材料的光学特性[10]。其中红外光学特性表现为由非晶态的无(低)损介质向晶态的高损耗介质转变。如图4(b)所示,在实验上验证了GST-金组成的薄膜吸收体中,通过改变相变材料薄膜厚度,可以实现谐振波长的调控[17]。
通过栅极电压、加热、光能注入等方法可以实现相变材料在晶态(c-GST)和非晶态(a-GST)之间的连续可逆调控[18-21]。这种调控的中间过程可以用Maxwell-Garnett,Bruggeman等多种等效介质方法来理论分析[22]。结合相变材料GST的实验结果和等效介质理论模型,其中间态的介电常数可以表示a-GST和c-GST的组合,则:
$$ \begin{split} &\frac{{{\varepsilon _{{\rm{GST}}}}\left( {\lambda ,C} \right) - 1}}{{{\varepsilon _{{\rm{GST}}}}\left( {\lambda ,C} \right) + 2}} = C \times \frac{{{\varepsilon _{c\text{-}{\rm{GST}}}}\left( {\lambda ,C} \right) - 1}}{{{\varepsilon _{c\text{-}{\rm{GST}}}}\left( {\lambda ,C} \right) + 2}} + \left( {1 - C} \right) \times\\ &\frac{{{\varepsilon _{a\text{-}{\rm{GST}}}}\left( {\lambda ,C} \right) - 1}}{{{\varepsilon _{a\text{-}{\rm{GST}}}}\left( {\lambda ,C} \right) + 2}} \end{split} $$ (11) 式中:εa-GST和εc-GST分别代表a-GST和c-GST的介电常数;常数C表示c-GST的在材料中的占比,取值可为0~1之间的任意值。随着相变材料由非晶态向晶态转变,可以实现红外辐射特性的连续调控,这已成为实现自适应红外隐身技术的潜在方案之一。
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如图5(a)所示,在传统的设计过程中,大多数研究都是通过先验的方法获得初始结构,包括但不限于图案结构(拓扑结构)、多层结构、台阶形结构。通过手动选择初始结构,来研究一些光学谐振的基本原理。这种传统设计过程也被称为正向设计,初始结构可以被视为自变量,而光谱特性被视为由于结构变化而产生的因变量。在正向设计的理论分析过程中,往往会给出耦合模式理论(Coupled model theory, CMT)、传输线理论、散射体模型等理论分析[23-25],以简化麦克斯韦方程组的求解。
图 5 (a) 正向设计示意图;(b) 反向设计示意图
Figure 5. (a) Schematic diagram of forward design; (b) Schematic diagram of inverse design
如图5(b)所示,反向设计旨在通过对样本群的光谱特性进行分析,从而挑选出其中更加符合目标函数的光谱,然后导出所对应样本特征。这种设计方法相比于正向设计,在设计功能性器件过程中展现出更为强大的效能。由于洛伦兹互易性,场源的作用是可以互换的,这种反向设计对于解决复杂的多模场耦合优化问题和多体散射优化问题是可行的。在此过程中,简化手动参数扫描和样本筛选的算法有二进制直接搜寻算法、遗传算法、粒子群算法、梯度下降优化等[26-27]。
相比于传统设计(正向设计)和最优解优化的反向设计,以机器学习为代表的数据驱动智能化算法设计正在迅速发展,并对微纳光器件产生深刻变革[28]。神经网络作为机器学习最有竞争力的分支之一,也可以从正向设计和反向设计两种方式来革新现有的吸收体(发射体)设计。如图6所示,简要介绍了神经网络应用于多层光学薄膜吸收体智能化设计的基本原理。第一种方式运用训练集样本对神经网络进行训练,简化了麦克斯韦方程组的求解,解决了传统电磁仿真费时耗力的问题[29];第二种方式则类比于反向设计,通过大量数据样本的启发,神经网络可以将电磁响应(光谱曲线)作为输入并直接输出结构[30]。智能设计方法为进一步提高微纳结构光器件性能和探索光与物质相互作用提供了全新的途径。
Research progress of infrared stealth technology of micro-nano optical structure (invited)
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摘要: 随着红外探测技术手段的多样化发展,红外隐身技术的需求日益迫切。由于传统的红外隐身技术面临着多途径目标探测和多功能兼容的严峻挑战,因此研究光学微纳结构红外隐身技术有着十分重要的意义。基于局域共振机制的亚波长尺度的光学微纳结构,极大地丰富了人们对光的传输行为的调控。在红外隐身技术领域,光学微纳结构可以针对红外辐射特性进行材料和结构的精细化设计,从而满足理想红外隐身发射光谱的需求,为发展更加多光谱、多功能、自适应的红外隐身技术提供全新的解决方案。文中围绕红外隐身技术的相关研究,首先介绍了多层薄膜吸收体、金属表面等离子激元、基于相变材料薄膜可调吸收体、智能化设计光学微纳结构实现光谱响应的基本原理,在此基础上,重点回顾了近年来基于光学微纳结构的红外隐身技术新特点,包括多光谱红外隐身技术、多功能红外隐身技术、自适应红外隐身技术的发展现状。最后,梳理了光学微纳结构红外隐身技术所存在的不足及面临的困难并对未来的研究方向和发展趋势进行了展望。Abstract:
Significance With the diversified development of infrared detection technology, the demand for infrared stealth technology is increasingly urgent. Infrared stealth technology aims to effectively control the infrared signature signals of weapons and equipment, reduce the operating range of enemy infrared detection systems, improve survival ability, penetration ability, and combat effectiveness. However, traditional infrared stealth technology is facing serious challenges of multi-band detection and multi-functional compatibility, making it of great significance to study the infrared stealth technology of micro-nano optical structure. Sub-wavelength micro-nano optical structures based on local resonance mechanism greatly enrich the modulation of light transmission behavior. They can be state-of-the-art in material and structure design for infrared radiation, so as to meet the demand of ideal emissivity spectrum for infrared stealth. It is foreseeable that infrared stealth technology based on the optical micro-nano structures will transform traditional infrared stealth technology and provide point-to-point spectral design for the multi-aspect demand, which makes the research progress of micro-nano optical structure infrared stealth technology meaningful. Progress Focusing on the progress of infrared stealth technology, this paper introduces the basic principles of thin film absorber, metal surface plasmonic, tunable absorber based on phase change materials (PCMs), and intelligent design for spectral response firstly. For example, the PCMs are widely used in tunable infrared absorbers by regulating resonance wavelength and changing infrared emissivity without the structural changes (Fig.4). And the innovatory field of the intelligent design has recently been transforming conventional micro-nano optical structure and allowing for the discovery of unorthodox optical structures via computer algorithms rather than engineered "by hand" (Fig.5-6). Secondly, the development status of optical micro-nano structure infrared stealth technology in the past decade is introduced. As an application technology driven by demand, infrared stealth technology faces many challenges such as multi-spectral compatibility, multi-functional integration, and complex changing environments. With the deepening optical micro-nano structures research, the application of infrared stealth technology has been expanding and showing the following new characteristics. (1) In order to deal with the thermal radiation detection of infrared atmospheric transparent window bands, infrared stealth technology is developing from single-band towards the multi-band infrared stealth; (2) On the basis of multi-band infrared stealth, balance and comprehensive design with infrared laser, visible light, radar and other multispectral stealth are required; (3) A new infrared stealth technology is developed that combines multiple functions such as thermal management, infrared sensor, and radiation regulation; (4) Adaptive infrared stealth technology is developed that integrates new materials such as phase change materials, two-dimensional materials of graphene, and vanadium oxides. To this end, the spectral tailoring design achieved through optical micro-nano structures endows infrared stealth technology with more new possibilities, including multispectral infrared stealth technology, multifunctional infrared stealth technology, and adaptive infrared stealth technology. According to the different requirements of multi-spectral compatibility, this paper summarizes the possible requirement of multispectral infrared stealth technology and current development status (Fig.7). Through the comprehensive survey, this paper reveals four development trends of micro-nano optical structure infrared stealth technology: multispectral compatibility, multi-function integration, large-area fabrication, and adaptive infrared stealth system. Conclusions and Prospects During the last decade, the micro-nano optical structure infrared stealth technology has made dramatic development. The multispectral infrared stealth technology has been extended from the single-band to the multi-band infrared stealth technology which is compatible with visible band, laser, and microwave. The multifunctional infrared stealth technology has been considered to integrate the thermal management, infrared encryption and infrared sensor, the adaptive infrared stealth technology has been widely studied in the dual-band infrared transparent atmosphere window by flourishing research of smart materials. The research of this paper aims to provide some reference for the infrared stealth technology of optical micro-nano structures in the future. It is expected that optical micro-nano structures will provide a promising way for the more multispectral, more versatile, and more adaptive infrared stealth technology. -
Key words:
- infrared stealth /
- thermal management /
- metamaterials /
- selective emitter /
- phase change materials
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图 8 (a) 基于多层薄膜结构红外隐身技术;(b) 基于分层超材料的多光谱兼容隐身技术;(c) 基于分层超材料的红外、微波、激光雷达隐身技术;(d)兼容可见光、红外、微波、激光隐身的多光谱隐身技术;(e)基于灵活组装的红外和微波兼容隐身技术;(f)基于金属-半导体-金属超材料的可见和红外隐身技术
Figure 8. (a) Infrared stealth based on multilayer film; (b) Hierarchical-metamaterial-based multispectral compatible stealth technology; (c) Hierarchical-metamaterial-based infrared, microwave and laser stealth technology; (d) Multispectral compatible stealth technology for visible, infrared, microwave and laser stealth; (e) Flexible assembled metamaterials for infrared and microwave camouflage; (f) Metal-semiconductor-metal metamaterial for visible and infrared stealth technologies
图 9 (a) 基于多层膜的热隐身兼容热管理;(b) 基于超材料的红外隐身与热管理兼容;(c) 基于多层膜的高温多功能红外隐身技术;(d) 基于MIM的高温热隐身与热管理功能兼容;(e) 可见光/红外信息显示与隐身技术;(f) 基于GST的红外加密与隐身兼容;(g) 基于二氧化钒的红外加密与隐身技术;(h) 基于VWO2的红外显示与红外隐身兼容;(i) 基于反向设计可切换的红外隐身超材料
Figure 9. (a) Multilayer for thermal stealth and thermal management; (b) Metamaterials for infrared camouflage and thermal management; (c) Multilayer for high-temperature infrared camouflage and thermal management; (d) MIM metamaterial for high-temperature infrared camouflage and thermal management; (e) Metamaterial for visible and infrared display with stealth technology; (f) GST for infrared encryption and stealth technology; (g) Infrared encryption and stealth technology based on VO2; (h) Infrared display and infrared stealth based on VWO2; (i) Switchable infrared stealth metamaterials based on inverse design
图 10 (a)~(b) 通过调控硫系相变材料的自适应红外隐身技术;(c) 通过调控液晶排列方向的自适应红外隐身技术;(d)~(f) 通过调控钒的氧化物的自适应红外隐身技术;(g)~(h) 通过调控石墨烯的自适应红外隐身技术;(i)~(j) 通过调节MIM金属超材料尺寸和运用金属电沉积方法实现的自适应红外隐身技术
Figure 10. (a)-(b) Implementation of adaptive infrared stealth technology by manipulating the chalcogenide PCM; (c) Regulation liquid crystal of orientation angle distribution for adaptive infrared stealth technology; (d)-(f) Vanadium oxide regulation for adaptive infrared stealth technology; (g)-(h) Graphene regulation for adaptive infrared stealth technology; (i)-(j) Implementation of adaptive infrared stealth technology by regulating scale of MIM metal metamaterial and employing metal electric deposition method
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